SEMICONDUCTOR DEVICE

摘要

A semiconductor chip includes a first circuit and a second circuit having different reference potentials. A first potential which is a reference potential of the first circuit is applied to the semiconductor chip through any of plural lead terminals, and a second potential which is a reference potential of the second circuit is applied to the semiconductor chip through any of plural lead terminals. A substrate of the semiconductor chip has a structure in which a buried insulating layer and a semiconductor layer of a first conductivity type are laminated on a semiconductor substrate such as a SOI substrate. A fixed potential is applied to the semiconductor substrate through a die pad and a lead terminal for a substrate potential. The fixed potential is applied to the semiconductor chip through a different route from the reference potential of the first circuit and the reference potential of the second circuit.

主权项

1. A semiconductor device comprising:
a substrate including a semiconductor substrate, a buried insulating layer formed over the semiconductor substrate, and a semiconductor layer formed over the buried insulating layer; an isolation insulating layer, buried in the semiconductor layer so as to reach the buried insulating layer, which insulates a first circuit forming region of the semiconductor layer from a second circuit forming region thereof; a first circuit formed using the first circuit forming region; a second circuit formed using the second circuit forming region; a first electrode pad which is connected to the first circuit forming region; and a second electrode pad which is connected to the second circuit forming region, wherein the semiconductor substrate is not electrically connected to the first electrode pad and the second electrode pad.