发明名称 SILICON SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To inexpensively manufacture and provide a silicon substrate having a new shape on the surface side opposite to a texture by performing high quality cleaning on the silicon substrate of substrate surface azimuth (100) having a texture structure by a gas etching method for improving light utilization efficiency.SOLUTION: The silicon substrate of substrate surface azimuth (100) has a texture. On the surface opposite to the texture formation surface, a quadrangular minute unevenness is formed in a ripple shape and the depth of a recess is 10-200 nm.
申请公布号 JP2014170775(A) 申请公布日期 2014.09.18
申请号 JP20130040470 申请日期 2013.03.01
申请人 PANASONIC CORP 发明人 ARAI YASUSHI;YAMAGUCHI NAOSHI;TANABE HIROSHI
分类号 H01L21/3065;H01L21/302;H01L31/04 主分类号 H01L21/3065
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