| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile memory cell having a split gate memory structure.SOLUTION: A split gate memory structure includes a pillar of an active region. A first source/drain region is disposed at a first end of the pillar, and a second source/drain region is disposed at a second end opposite to the first end. A channel region exists between the first and second source/drain regions. The pillar has a major surface extending between the first and second ends, which exposes the first and second source/drain regions. A select gate is adjacent to the first source/drain region and a first portion of the channel region, and encircles the major surface of the pillar. A charge storage layer is adjacent to the second source/drain region and a second portion of the channel region, and encircles the major surface of the pillar. A control gate is adjacent to the charge storage layer, and encircles the pillar.</p> |
