INTEGRATED CLUSTER TO ENABLE NEXT GENERATION INTERCONNECT

摘要

Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.

主权项

1. A method for forming passivation layers, comprising:
forming metal columns over a substrate, wherein each metal column is doped with manganese, aluminum, zirconium, or hafnium; depositing a dielectric material between and over the metal columns; and curing the dielectric material to form a passivation layer on vertical surfaces of the metal columns.