RESISTIVE NON-VOLATILE MEMORY

摘要

A multi-bit NVM cell includes a storage unit having resistive elements, such as phase change resistive elements. The NVM cell may be configured as a single port or dual port multi-bit cell. The NVM cell includes primary and secondary cell selectors. The primary selector selects the multi-bit cell while the secondary selector selects a bit within the multi-bit cell. A plurality of storage units can be commonly coupled to a primary selector, facilitating high density applications.

主权项

1. A memory cell comprising:
a storage unit having a plurality of resistive elements; a primary selector coupled to the storage unit, the primary selector, when active, selects the memory cell for access; and a secondary selector having first and second secondary selectors, the secondary selector coupled to the storage unit and the primary selector, when appropriate signals are applied to the memory cell, the secondary selector selects an appropriate resistive element of the storage unit.