| 发明名称 |
FinFET with Bottom SiGe Layer in Source/Drain |
| 摘要 |
A FinFET includes a substrate, a fin structure on the substrate, a source in the fin structure, a drain in the fin structure, a channel in the fin structure between the source and the drain, a gate dielectric layer over the channel, and a gate over the gate dielectric layer. At least one of the source and the drain includes a bottom SiGe layer. |
| 申请公布号 |
US2014264590(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313800817 |
申请日期 |
2013.03.13 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yu Ming-Hua;Jeng Pei-Ren;Lee Tze-Liang |
| 分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A FinFET, comprising:
a substrate; a fin structure on the substrate; a source in the fin structure; a drain in the fin structure; a channel in the fin structure between the source and the drain; a gate dielectric layer over the channel; and a gate over the gate dielectric layer, wherein at least one of the source and the drain includes a bottom SiGe layer. |
| 地址 |
US |
