发明名称 |
METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING FORMATION OF CHEMICAL GUIDE PATTERNS FOR DIRECTED SELF-ASSEMBLY LITHOGRAPHY |
摘要 |
Methods for creating chemical guide patterns by DSA lithography for fabricating an integrated circuit are provided. In one example, an integrated circuit includes forming a bifunctional brush layer of a polymeric material overlying an anti-reflective coating on a semiconductor substrate. The polymeric material has a neutral polymeric block portion and a pinning polymeric block portion that are coupled together. The bifunctional brush layer includes a neutral layer that is formed of the neutral polymeric block portion and a pinning layer that is formed of the pinning polymeric block portion. A portion of the neutral layer or the pinning layer is selectively removed to define a chemical guide pattern. A block copolymer layer is deposited overlying the chemical guide pattern. The block copolymer layer is phase separated to define a nanopattern that is registered to the chemical guide pattern. |
申请公布号 |
US2014273511(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313841694 |
申请日期 |
2013.03.15 |
申请人 |
GLOBALFOUNDRIES, INC. |
发明人 |
Farrell Richard A.;Schmid Gerard M.;Ji xU |
分类号 |
H01L21/033 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
1. A method for creating chemical guide patterns by DSA lithography for fabricating an integrated circuit comprising:
forming a bifunctional brush layer of a polymeric material overlying an anti-reflective coating on a semiconductor substrate, wherein the polymeric material comprises a neutral polymeric block portion and a pinning polymeric block portion that are coupled together, and wherein the bifunctional brush layer comprises a neutral layer that is formed of the neutral polymeric block portion and a pinning layer that is formed of the pinning polymeric block portion; selectively removing a portion of the neutral layer or the pinning layer to define a chemical guide pattern; depositing a block copolymer layer overlying the chemical guide pattern; and phase separating the block copolymer layer to define a nanopattern that is registered to the chemical guide pattern. |
地址 |
Grand Cayman KY |