NOVEL STRUCTURE OF METAL GATE MIM

摘要

First and second multi-layer structures are formed within respective openings in at least one dielectric layer formed over a semiconductor substrate. The first multi-layer structure comprises a gate electrode, and the second multi-layer structure comprises a resistor and a first electrode of a metal-insulator-metal (MIM) capacitor structure. The MIM capacitor structure is completed by forming a dielectric film on the at least one dielectric layer and forming a second electrode on the dielectric film.

主权项

1. A method, comprising:
forming first and second multi-layer structures within respective openings in at least one dielectric layer formed over a semiconductor substrate, wherein the first multi-layer structure comprises a gate electrode, and wherein the second multi-layer structure comprises a resistor and a first electrode of a metal-insulator-metal (MIM) capacitor structure; and completing the MIM capacitor structure by:
forming a dielectric film on the first multi-layer structure, the second multi-layer structure, and the at least one dielectric layer; andforming a second electrode on the dielectric film.