Non-Volatile Memory Devices and Methods of Fabricating the Same

摘要

A nonvolatile memory device is provided. The nonvolatile memory device comprises a plurality of impurity regions formed in a substrate, a first contact electrically connected to at least one of the impurity regions, a second contact electrically connected to at least one of the impurity regions, a first information storage portion formed at a first height from the substrate and electrically connected to the first contact, and a second information storage portion formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact.

主权项

1. A nonvolatile memory device comprising:
a plurality of impurity regions that are formed in a substrate; a first contact that is electrically connected to at least one of the impurity regions; a second contact that is electrically connected to at least one of the impurity regions; a first information storage portion that is formed at a first height from the substrate and electrically connected to the first contact; and a second information storage portion that is formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact.