发明名称 |
ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL |
摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin film transistor which has a high carrier mobility, and suffers a small change in threshold voltage even after having been driven repeatedly.SOLUTION: An organic thin film transistor comprises a semiconductor active layer including a compound expressed by the general formula (1). {X is a sulfur or oxygen atom; Z is a substituent group having a length of 3.7 Å or shorter from a nitrogen atom to an end; Rto Rare each a hydrogen atom or a substituent group, provided that at least one of Rto Ris a substituent group expressed by the general formula (W); L is a particular divalent coupling group; and R is a substituted or unsubstituted alkyl group (the total number of carbon atoms of the alkyl group included in -L-R is 4 or more) having a particular number or more of carbon atoms, an oligooxyethylene group in which the number v of times an oxyethylene unit is repeated is 2 or larger, an oligosiloxane group having two or more silicon atoms, or a substituted or unsubstituted trialkylsilyl group.} |
申请公布号 |
JP2014170928(A) |
申请公布日期 |
2014.09.18 |
申请号 |
JP20140020141 |
申请日期 |
2014.02.05 |
申请人 |
FUJIFILM CORP |
发明人 |
TAKAKU KOJI;TOYAMA WATARU;KOYANAGI MASAFUMI;KINOSHITA MASAJI |
分类号 |
H01L51/30;C07D491/048;C07D495/04;H01L21/336;H01L29/786;H01L51/05;H01L51/40 |
主分类号 |
H01L51/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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