| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem occurring when forming a thin film transistor structure in which a source electrode and a drain electrode which are composed of a metallic material and an oxide semiconductor film are directly in contact with each other, that there is the possibility of an increase in contact resistance; one of the factors which cause the increase in contact resistance is that Schottky junction is formed at a contact surface between the source electrode and the drain electrode with the oxide semiconductor film.SOLUTION: Between an oxide semiconductor film and a source electrode and a drain electrode, an oxygen-deficient oxide semiconductor layer which has crystal grains of the size of not less than 1 nm and not more than 10 nm, and had a carrier concentration higher than that of an oxide semiconductor film which forms a channel formation region is provided. |
