SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device having a capacitive element.SOLUTION: A memory element and a capacitive element are formed on a semiconductor substrate. The memory element has a gate electrode formed on the semiconductor substrate via a gate insulating film having a charge storage part therein. The capacitive element has a lower electrode LE, and an upper electrode UE formed via a capacitance insulating film DE on the lower electrode LE. The capacitance insulating film DE and the gate insulating film of the memory element are formed by an insulating film of the same layer. A planar shape of the upper electrode UE has a shape obtained by cutting off corners of a rectangle or rounding off corners of a rectangle. A retreating amount BK of an end part of the capacitance insulating film DE from a side wall of the upper electrode UE at the corner part or the rounded part of the planar shape of the upper electrode UE is smaller than that of the gate insulating film from the side wall of the gate electrode at the corner part of the planar shape of the gate electrode.