| 发明名称 |
NON-VOLATILE MEMORY AND METHOD OF OPERATION THEREOF |
| 摘要 |
A method of altering threshold voltage distribution of a non-volatile MLC memory before the memory is programmed according to a pre-designated coding table. The method includes grouping a plurality of cells which are pre-designated to have the same first bit voltage in a same main state and then grouping the cells in a selected main state into a same sub state if they have the same pre-designated second bit voltage. The method further has a step by elevating the first bit voltage of the cells with highest pre-designated second bit voltage to a voltage which is greater than the voltage of the pre-designated highest main state. |
| 申请公布号 |
US2014269054(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313855989 |
申请日期 |
2013.04.03 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
WU GUAN WEI;CHANG YAO WEN;YANG I CHEN;LU TAO CHENG |
| 分类号 |
G11C16/34 |
主分类号 |
G11C16/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of altering threshold voltage distribution of a MLC non-volatile memory before programming according to a pre-designated coding table, the method comprising:
grouping a plurality of cells which are pre-designated to have the same first bit voltage in a same main state; grouping the cells in a selected main state into a same sub state if they have the same pre-designated second bit voltage; elevating the first bit voltage of the cells with highest pre-designated second bit voltage to a voltage which is greater than the voltage of the pre-designated highest main state. |
| 地址 |
Hsin-Chu City TW |
