| 发明名称 |
Structure and Method for Manufacture of Memory Device With Thin Silicon Body |
| 摘要 |
Described herein is a structure and method of manufacturing for a memory device with a thin silicon body. The memory device may be a semiconductor comprising: a first dielectric of a first width; a second dielectric of a second width, the second width less than the first width; and a thin film polycrystalline silicon (poly-Si) on sidewalls of the second dielectric. |
| 申请公布号 |
US2014264541(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313829392 |
申请日期 |
2013.03.14 |
| 申请人 |
Conversant Intellectual Property Management Inc. |
发明人 |
Rhie Hyoung Seub |
| 分类号 |
H01L29/792;H01L21/3065 |
主分类号 |
H01L29/792 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor comprising:
a first dielectric of a first width; a second dielectric of a second width, the second width less than the first width; and a thin film polycrystalline silicon (poly-Si) on sidewalls of the second dielectric. |
| 地址 |
Ottawa CA |
