| 发明名称 |
Wafers, Panels, Semiconductor Devices, and Glass Treatment Methods |
| 摘要 |
Glass treatment methods, wafer, panels, and semiconductor devices are disclosed. In some embodiments, a method of treating a glass substrate includes forming a first film on the glass substrate, the first film having a first porosity. The method includes forming a second film on the first film, the second film comprising an electrically insulating material and having a second porosity. The first porosity is lower than the second porosity. |
| 申请公布号 |
US2014264344(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313802484 |
申请日期 |
2013.03.13 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Liao Wen-Shiang |
| 分类号 |
H01L21/02;H01L29/24 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of treating a glass substrate, the method comprising:
forming a first film on the glass substrate, the first film having a first porosity; and forming a second film on the first film, the second film comprising an electrically insulating material and having a second porosity, wherein the first porosity is lower than the second porosity. |
| 地址 |
Hsin-Chu TW |
