发明名称 |
SEMICONDUCTOR DEVICE CHANNELS |
摘要 |
A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include a signal channel and a power channel. The power channel may include power channel cross-sectional portions. A first conductor in the power channel may have a first cross-sectional area. A second conductor in the signal channel may have a second cross-sectional area. The second cross-sectional area may be smaller than the first cross-sectional area. The method of manufacture includes establishing a signal conductor layer including a signal channel and a power channel, introducing a first conductor in the power channel having a first cross-sectional area, and introducing a second conductor in the signal channel having a second cross-sectional area where the second cross-sectional area is smaller than the first cross-sectional area. |
申请公布号 |
US2014264942(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313795721 |
申请日期 |
2013.03.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Allen David H.;Dewanz Douglas M.;Paulsen David P.;Sheets, II John E.;Williams Kelly L. |
分类号 |
H01L23/528 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a signal conductor layer having a signal channel and a power channel, the power channel comprising a first power channel cross-sectional portion and a second power channel cross-sectional portion, the first power channel cross-sectional portion and the signal channel having a substantially equivalent cross-sectional area; a first conductor in the power channel having a first cross-sectional area; and a second conductor in the signal channel having a second cross-sectional area, the second cross-sectional area smaller than the first cross-sectional area. |
地址 |
Armonk NY US |