A substrate processing chamber and methods for processing multiple substrates is provided and generally includes an inductively coupled pie-shaped plasma source positioned so that a substrate rotating on a platen will pass through a plasma region adjacent the plasma source.
申请公布号
WO2014144377(A1)
申请公布日期
2014.09.18
申请号
WO2014US28762
申请日期
2014.03.14
申请人
APPLIED MATERIALS, INC.;FORSTER, JOHN, C.;YUDOVSKY, JOSEPH