LITHOGRAPHY-FRIENDLY LOCAL READ CIRCUIT FOR NAND FLASH MEMORY DEVICES AND MANUFACTURING METHOD THEREOF

摘要

A flash memory device comprising a local sensing circuitry is provided in a hierarchical structure with local and global bit lines. The local sensing circuitry comprise read and pass circuits configured to sense and amplify read currents during read operations, wherein the amplified read signals may be passed to a global circuit via the local and global bit lines.