| 摘要 |
The present technique pertains to a solid-state image-pickup element that is resistant to misalignment during a manufacturing process and that has a high conversion efficiency regarding photoelectric conversion, to a producing method that makes it possible to achieve the solid-state image-pickup element, and to electronic equipment. The solid-state image-pickup element includes: a photoelectric conversion part that is formed in a state of being embedded in a semiconductor substrate; an impurity area that holds charges generated by the photoelectric conversion part; and a transfer transistor that transfers charges to the impurity area. A gate electrode of the transfer transistor is formed so as to extend in the depth direction, from a surface of the semiconductor substrate where the impurity area is formed toward the photoelectric conversion part in the semiconductor substrate. A channel part of the transfer transistor is surrounded by gate electrodes in two or more directions other than the direction of the impurity area, as viewed in the depth direction. The present technique can be applied to, for example, a back surface irradiation-type solid-state image-pickup element and the like. |
