Magnetoresistive structures and magnetic random-access memory devices including the same

摘要

Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer (13) having a magnetization direction that is fixed, a second magnetic layer (17) orresponding to the first magnetic layer (13), wherein a magnetization direction of the second magnetic layer (17) is changeable, and a magnetoresistance (MR) enhancing layer (15) and an intermediate layer (16) both between the first magnetic layer (13) and the second magnetic layer(17).