发明名称 Nano-piezoelectric generator and method of manufacturing the same
摘要 <p>A nano-piezoelectric generator (100) includes a first electrode (120) and a second electrode (150), at least one nano-piezoelectric unit (140), formed of a semiconductor piezoelectric material having a nano-structure, disposed between the first (120)and the second electrodes (150), and an interlayer (130), formed of an insulating material, disposed between the first electrode (120) and the at least one nano-piezoelectric unit (140). </p>
申请公布号 EP2631960(A3) 申请公布日期 2014.09.17
申请号 EP20130151703 申请日期 2013.01.17
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 SOHN, JUNG-INN;CHA, SEUNG-NAM
分类号 H01L41/39;H01L41/113;H01L41/18;H02N2/18 主分类号 H01L41/39
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