HIGH ELECTRON MOBILITY TRANSISTOR DEVICES

摘要

The present invention relates to a high electron mobility transistor device. The device includes a buffer layer formed on a substrate; a face-inversion layer formed on a part of the buffer layer; semiconductor layers formed on the face-inversion layer and the buffer layer; and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layers. The high electron mobility transistor device has a stable normally off characteristic.