发明名称 |
Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
摘要 |
<p>A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.</p> |
申请公布号 |
EP1385215(B1) |
申请公布日期 |
2014.09.17 |
申请号 |
EP20030015373 |
申请日期 |
2003.07.08 |
申请人 |
NICHIA CORPORATION |
发明人 |
NAGAHAMA, SHINICHI;SANO, MASAHIKO;YANAMOTO, TOMOYA;SAKAMOTO, KEIJI;YAMAMOTO, MASASHI;MORITA, DAISUKE |
分类号 |
H01L21/762;H01L33/00;H01L33/06;H01L33/12;H01L33/32;H01L33/42;H01L33/44;H01L33/48;H01L33/50;H01L33/62 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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