| 摘要 |
According to an embodiment of the present invention, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer, and a light emitting part. The first semiconductor layer and the second semiconductor layer include nitride semiconductors. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer. The light emitting layer includes a plurality of barrier layers and a plurality of well layers, alternately stacked. The well layer includes a first p side well layer closest to the second semiconductor layer, and a second p side well layer secondly close to the second semiconductor layer. Localized energy of an exciton of the first p side well layer is lower than localized energy of an exciton of the second p-side well layer. |
