发明名称 Thin-film structure with asymmetric ballistic conductance
摘要 A thermoelectric structure, 10, comprises a thin thermoelectric film extending in a plane between parallel first and second shorting bars, 14, 16. A plurality of curved ballistic scattering guides, 26, are formed in a magnetic field region of the thin thermoelectric film subjected to a local, substantially uniform, nonzero magnetic field, 18, normal to the plane of the thin thermoelectric film.
申请公布号 EP2693501(A3) 申请公布日期 2014.09.17
申请号 EP20130178334 申请日期 2013.07.29
申请人 HAMILTON SUNDSTRAND CORPORATION 发明人 MANTESE, JOSEPH V.;LANDRY, ERIC S.;CULP, SLADE R.
分类号 H01L35/00;H01L37/00 主分类号 H01L35/00
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