发明名称 |
Retention check logic for non-volatile memory |
摘要 |
An integrated circuit memory device includes an array of non-volatile, charge trapping memory cells, configured to store data values in memory cells in the array using threshold states, including a higher threshold state characterized by a minimum threshold exceeding a selected read bias. A controller includes a stand-by mode, a write mode and a read mode. Retention check logic executes on power-up, or during the stand-by mode, to identify memory cells in the higher threshold state which fail a threshold retention check. Also, logic is provided to reprogram the identified memory cells. |
申请公布号 |
EP2779175(A2) |
申请公布日期 |
2014.09.17 |
申请号 |
EP20130174686 |
申请日期 |
2013.07.02 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HUNG, CHUN-HSIUNG;KUO, NAI-PING;CHANG, KUEN-LONG;CHEN, KEN-HUI;WANG, YU-CHEN |
分类号 |
G11C16/34 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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