| 摘要 |
<p>A one-time-programmable memory device comprises a one-time-programmable memory cell array, a voltage pumping circuit, and a programming verification circuit. The one-time-programmable memory cell array comprises a plurality of memory cells (30, 80; 1000; 1100). Each memory cell (30, 80; 1000; 1100) is arranged at an intersection of a bit line and a word line. The voltage pumping circuit comprises a plurality of local voltage boost circuits. Each local voltage boost circuit is shared by a corresponding memory cell (30, 80; 1000; 1100) of the plurality of memory cells. The programming verification circuit is coupled to the one-time-programmable memory cell array for verifying that conduction current of programmed memory cells (30, 80; 1000; 1100) of the plurality of memory cells is greater than a predetermined current level after programming. Each local boost circuit isolates leakage current of a corresponding programmed memory cell (30, 80; 1000; 1100), and prevents programming voltage failure due to current overloading at a corresponding voltage pumping circuit.</p> |
