ISOLATION REGION GAP FILL METHOD

摘要

A gap filling method of an isolation region comprises a step for film-depositioning a first dielectric material on a semiconductor device through fluidity film deposition process or other gap filling film deposition processes. The semiconductor device include a first fin field-effect transistor (FinFET) having a plurality of first fins and a second FinFET having a plurality of second fins. Such method additionally comprises a step for removing a first dielectric material between the first FinFET and the second FinFET so as to form a gap between devices; a step for film-depositioning a second dielectric material inside the gap between the devices; and a step for applying an annealing process on the semiconductor device.