NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

A nitride semiconductor light emitting device having a structure capable of reducing a lateral spread of carriers flowing from a semiconductor ridge is provided. In the semiconductor laser on the {20-21} plane, two-dimensional hole gas is created at the heterojunction in a hole band. When the heterojunction that generates two-dimensional hole gas is located outside the semiconductor ridge, the two-dimensional hole gas causes carriers in the lateral direction to spread in the p-side semiconductor region. On the other hand, two-dimensional hole gas cannot be generated at the heterojunction in the hole band in the semiconductor laser on the c-plane. When the heterojunction HJ is contained in the semiconductor ridge, two-dimensional hole gas does not cause carriers flowing out of the semiconductor ridge to spread in the lateral direction.