Shared-diffusion standard cell architecture

摘要

A semiconductor standard cell includes an N-type diffusion area and a P-type diffusion area, both extending across the cell and also outside of the cell. The cell also includes a conductive gate above each diffusion area to create a semiconductive device. A pair of dummy gates are also above the N-type diffusion area and the P-type diffusion area creating a pair of dummy devices. The pair of dummy gates are disposed at opposite edges of the cell. The cell further includes a first conductive line configured to couple the dummy devices to power for disabling the dummy devices.

主权项

1. A semiconductor standard cell, comprising:
an N-type diffusion area extending across the cell and also outside of the cell; a P-type diffusion area extending across the cell and also outside of the cell; at least one conductive gate above each diffusion area to create a semiconductive device; a pair of dummy gate, each dummy gate disposed above the N-type diffusion area and the P-type diffusion area to create at least a pair of dummy devices, the pair of dummy gates being disposed at opposite edges of the cell; and at least one first conductive line configured to couple at least one of the dummy devices to power for disabling the at least one dummy device.