Semiconductor device and method of manufacturing same

摘要

Certain embodiments provide a semiconductor device comprising a plurality of memory cell arrays each of which includes a plurality of memory cell transistors and select transistors each of which is disposed at either end of the memory cell transistors, a diffused layer formed between a first and a second select transistors adjacent to each other, a first sidewall film formed on each of the opposed sidewalls of said first and second select transistors, a second sidewall film formed on said first sidewall film, and a conducting layer which contacts with said diffused layer. The second sidewall film covers at least part of the top surface and the side surface of said first sidewall film. The edge of said contact portion is positioned at a distance no less than the total thickness of said first and second sidewall films from the sidewalls of said first and second select transistors.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a transistor region formed on said semiconductor substrate and having a plurality of memory cell arrays formed of a plurality of memory cell transistors and select transistors, one of the select transistors being disposed on one side and another one of the select transistors being disposed on the other side of said plurality of memory cell transistors; a diffused layer formed on the surface of said semiconductor substrate between adjacent first and second select transistors of said memory cell arrays in said transistor region; a first sidewall film formed on each of the opposed sidewalls of said first and second select transistors adjacent to each other; a second sidewall film formed on said first sidewall film; and a conducting layer formed between said first and second select transistors, so as to contact with said diffused layer, wherein said second sidewall film is formed so as to cover at least part of the top surface and the side surface of said first sidewall film, said second sidewall film includes at least two surfaces forming a step portion, the two surfaces are directly contacted with said conducting layer, and said second sidewall film is a single layer and is formed along said first sidewall film under the step portion.