发明名称 Targets for generating ions and treatment apparatuses using the targets
摘要 Provided is an ion beam treatment apparatus including the target. The ion beam treatment apparatus includes a substrate having a first surface and a second surface opposed to the first surface, and including a cone type hole decreasing in width from the first surface to the second surface to pass through the substrate, wherein an inner wall of the substrate defining the cone type hole is formed of a metal, an ion generation thin film attached to the second surface to generate ions by a laser beam incident into the cone type hole through the first surface and strengthen, and a laser that emits a laser beam to generate ions from the ion generation thin film and project the ions onto a tumor portion of a patient. The laser beam incident into the cone type hole is focused by the cone type hole and is strengthened.
申请公布号 US8835870(B2) 申请公布日期 2014.09.16
申请号 US201313737706 申请日期 2013.01.09
申请人 Electronics and Telecommunications Research Institute 发明人 Jung Moon Youn;Pyo Hyeon-Bong;Park Hyung Ju;Kim Seunghwan;Park Seon Hee;Shin Dong-Ho;Lee Hwang Woon
分类号 G21K5/04 主分类号 G21K5/04
代理机构 代理人
主权项 1. An ion generation target comprising: a substrate including a first surface and a second surface opposed to the first surface and a cone type hole, the cone type hole having a top surface and a bottom surface in the first surface and the second surface of the substrate, respectively, the cone type hole penetrating through the substrate such that a cross-sectional area of the cone type hole continuously decreases from the top surface to the bottom surface, the cross-sectional area parallel to the top and bottom surfaces of the cone type hole, the cone type hole further having a sidewall surface that has a reflectivity higher than that of the substrate; and an ion generation thin film attached to the second surface of the substrate such that a portion of the ion generation thin film contacts the bottom surface of the cone type hole, the ion generation thin film configured to generate ions when a laser beam incident through the top surface of the cone type hole strikes the contacting portion of the ion generation thin film, an intensity of the laser beam increasing when the laser beam penetrates through the cone type hole from the top surface to the bottom surface.
地址 Daejeon KR