Transistor of semiconductor device and method for manufacturing the same

摘要

Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (GIDL) current is reduced by decreasing a work function at an upper portion of a gate electrode, and a threshold voltage of the transistor is maintained by maintaining a work function at a lower portion of the gate electrode at a high level, thereby reducing a leakage current of the transistor and reducing a read time and a write time of the semiconductor device. The transistor of the semiconductor device includes: a recess with a predetermined depth in a semiconductor substrate; a first gate electrode disposed within the recess; and a second gate electrode disposed on the first gate electrode into which ions of one or more of nitrogen (N), oxygen (O), arsenic (As), aluminum (Al), and hydrogen (H) are doped.

主权项

1. A method for manufacturing a transistor of a semiconductor device, the method comprising:
forming a recess having a predetermined depth in a semiconductor substrate; forming a gate electrode within the recess; and doping an upper portion of the gate electrode with ions to divide the gate electrode into a first gate electrode which is not doped with ions and a second gate electrode that is doped with ions, wherein the first gate electrode does not overlap with a junction region, and the second gate electrode overlaps with the junction region.