发明名称 Organic light emitting diode display and method for manufacturing the same
摘要 An organic light emitting diode (OLED) display and a method for manufacturing the same are provided. The OLED display includes a substrate, an active layer and a capacitor lower electrode positioned on the substrate, a gate insulating layer positioned on the active layer and the capacitor lower electrode, a gate electrode positioned on the gate insulating layer at a location corresponding to the active layer, a capacitor upper electrode positioned on the gate insulating layer at a location corresponding to the capacitor lower electrode, a first electrode positioned to be separated from the gate electrode and the capacitor upper electrode, an interlayer insulating layer positioned on the gate electrode, the capacitor upper electrode, and the first electrode, a source electrode and a drain electrode positioned on the interlayer insulating layer, and a bank layer positioned on the source and drain electrodes.
申请公布号 US8835203(B2) 申请公布日期 2014.09.16
申请号 US201313969236 申请日期 2013.08.16
申请人 LG Display Co., Ltd. 发明人 Kim Hyunho;Lee Seokwoo;Choi Heedong;Lee Sangjin;Seo Seongmoh
分类号 H01L21/00;H01L51/52;H01L51/56;H01L27/32 主分类号 H01L21/00
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A method for manufacturing an organic light emitting diode (OLED) display comprising: sequentially forming a polycrystalline silicon layer, an insulating layer, and a first metal layer on a substrate; coating a first photosensitive layer on the substrate and patterning the first photosensitive layer using a first halftone mask to form an active layer and a silicon pattern, and simultaneously forming a first insulating pattern on the active layer, a second insulating pattern on the silicon pattern, a first metal material on the first insulating pattern and a capacitor lower electrode on the second insulating pattern; forming a gate insulating layer on the active layer and the capacitor lower electrode; sequentially stacking a metal oxide layer and a second metal layer on the gate insulating layer and patterning the metal oxide layer and the second metal layer to form a gate electrode having a stack of a first metal oxide material and a second metal material, a capacitor upper electrode having a stack of a second metal oxide material and a third metal material, and a first electrode having a stack of a third metal oxide material and a fourth metal material; forming an interlayer insulating layer on the gate electrode, the capacitor upper electrode, and the first electrode; stacking a third metal layer on the interlayer insulating layer, and patterning the third metal layer to form a source electrode and a drain electrode and simultaneously patterning the fourth metal material formed on the first electrode; coating a second photosensitive layer on the source electrode, the drain electrode, and the first electrode and patterning the second photosensitive layer using a second halftone mask to form a bank layer and a spacer; forming an organic layer on the first electrode; and forming a second electrode on the organic layer.
地址 Seoul KR