| 摘要 |
<p>The present invention relates to a method for forming a metal electrode wiring of a solar cell through a selective deposition process. The method for forming a metal electrode wiring in a solar cell element comprises the steps of: forming an emitter diffusion region formed on the upper surface of a silicon substrate; forming a base diffusion region formed on the lower surface of the substrate; forming a transparent electrode layer by TCO-based indium tin oxide (ITO) to a transparent electrode layer deposited on the emitter diffusion region and the base diffusion region; forming a seed layer for selective electrode seed formation on the transparent electrode layer formed by the ITO forming step; forming a copper (Cu) metal electrode on the surface in which the seed layer is formed; and forming a cap layer on the metal electrode surface.</p> |
