发明名称 Method for fabricating a circuit
摘要 A method for fabricating a circuit, by defining a first set of resist features on a substrate and corresponding to a first mask layout, followed by defining a second set of resist features on the substrate corresponding to a second mask layout, wherein the second set adds to the first set for rectifying an error in either mask layout. In another aspect, the method is by defining a first set of resist features on a substrate and corresponding to a first mask layout that has an error, etching the substrate while the first set protects selected regions, defining a second set of resist features on the substrate and corresponding to a second mask layout, followed by etching the substrate to selectively remove portions of the selected regions for rectifying the error.
申请公布号 US8835101(B1) 申请公布日期 2014.09.16
申请号 US201113155299 申请日期 2011.06.07
申请人 III Holdings 1, LLC 发明人 Mani Krishnakumar
分类号 G03F7/26 主分类号 G03F7/26
代理机构 McAndrews, Held & Malloy, Ltd. 代理人 McAndrews, Held & Malloy, Ltd.
主权项 1. A method for fabricating a circuit, said method comprising: forming a first at least one resist feature on a processed layer, wherein said first at least one resist feature corresponds to a first mask layout, and wherein said first mask layout has an error; etching at a first time said processed layer while said first at least one resist feature protects a first at least one selected region of said processed layer; stripping said first at least one resist feature; forming a second at least one resist feature on said processed layer, wherein said second at least one resist feature corresponds to a second mask layout; etching at a second time said processed layer while said second at least one resist feature protects a second at least one selected region of said processed layer, wherein said etching at a second time selectively removes a portion of said first selected region of said processed layer and forms a void therein for rectifying said error; and at least partially filling said void with a dielectric material.
地址 Wilmington DE US
您可能感兴趣的专利