发明名称 |
Method for fabricating a circuit |
摘要 |
A method for fabricating a circuit, by defining a first set of resist features on a substrate and corresponding to a first mask layout, followed by defining a second set of resist features on the substrate corresponding to a second mask layout, wherein the second set adds to the first set for rectifying an error in either mask layout. In another aspect, the method is by defining a first set of resist features on a substrate and corresponding to a first mask layout that has an error, etching the substrate while the first set protects selected regions, defining a second set of resist features on the substrate and corresponding to a second mask layout, followed by etching the substrate to selectively remove portions of the selected regions for rectifying the error. |
申请公布号 |
US8835101(B1) |
申请公布日期 |
2014.09.16 |
申请号 |
US201113155299 |
申请日期 |
2011.06.07 |
申请人 |
III Holdings 1, LLC |
发明人 |
Mani Krishnakumar |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
McAndrews, Held & Malloy, Ltd. |
代理人 |
McAndrews, Held & Malloy, Ltd. |
主权项 |
1. A method for fabricating a circuit, said method comprising:
forming a first at least one resist feature on a processed layer, wherein said first at least one resist feature corresponds to a first mask layout, and wherein said first mask layout has an error; etching at a first time said processed layer while said first at least one resist feature protects a first at least one selected region of said processed layer; stripping said first at least one resist feature; forming a second at least one resist feature on said processed layer, wherein said second at least one resist feature corresponds to a second mask layout; etching at a second time said processed layer while said second at least one resist feature protects a second at least one selected region of said processed layer, wherein said etching at a second time selectively removes a portion of said first selected region of said processed layer and forms a void therein for rectifying said error; and at least partially filling said void with a dielectric material. |
地址 |
Wilmington DE US |