发明名称 Methods and apparatuses including a select transistor having a body region including monocrystalline semiconductor material and/or at least a portion of its gate located in a substrate
摘要 Some embodiments include apparatuses and methods having a memory cell string including memory cells located in different levels of the apparatuses and a select transistor coupled to the memory cell string. In at least one of such apparatuses, the select transistor can include a body region including a monocrystalline semiconductor material. Other embodiments including additional apparatuses and methods are described.
申请公布号 US8837222(B2) 申请公布日期 2014.09.16
申请号 US201113282237 申请日期 2011.10.26
申请人 Micron Technology, Inc. 发明人 Tanzawa Toru
分类号 G11C16/04;H01L21/04;H01L27/115 主分类号 G11C16/04
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. An apparatus comprising: a memory cell string including memory cells located in different levels of the apparatus; and a select transistor coupled to the memory cell string, the select transistor including a body region, wherein the body region includes a monocrystalline semiconductor material, and the body region comprises at least a part of a pedestal formed of the monocrystalline semiconductor material, the memory cell string overlying the pedestal.
地址 Boise ID US