发明名称 |
Methods and apparatuses including a select transistor having a body region including monocrystalline semiconductor material and/or at least a portion of its gate located in a substrate |
摘要 |
Some embodiments include apparatuses and methods having a memory cell string including memory cells located in different levels of the apparatuses and a select transistor coupled to the memory cell string. In at least one of such apparatuses, the select transistor can include a body region including a monocrystalline semiconductor material. Other embodiments including additional apparatuses and methods are described. |
申请公布号 |
US8837222(B2) |
申请公布日期 |
2014.09.16 |
申请号 |
US201113282237 |
申请日期 |
2011.10.26 |
申请人 |
Micron Technology, Inc. |
发明人 |
Tanzawa Toru |
分类号 |
G11C16/04;H01L21/04;H01L27/115 |
主分类号 |
G11C16/04 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. An apparatus comprising:
a memory cell string including memory cells located in different levels of the apparatus; and a select transistor coupled to the memory cell string, the select transistor including a body region, wherein the body region includes a monocrystalline semiconductor material, and the body region comprises at least a part of a pedestal formed of the monocrystalline semiconductor material, the memory cell string overlying the pedestal. |
地址 |
Boise ID US |