Vapor-phase growing apparatus and vapor-phase growing method

摘要

According to one embodiment, a vapor-phase growing apparatus, includes: a reactor containing a plurality of gas introduction portions and a gas reaction portion located below the gas introduction portions; a susceptor, of which a surface is exposed in an interior space of the gas reaction portion of the reactor, for disposing and fixing a substrate on the surface thereof; a gas distributor provided between the gas introduction portions and the gas reaction portion of the reactor; a plurality of gas inlet conduits which are connected with the gas introduction portions, respectively; and a switching device, which is provided in an outside of the reactor, for switching gases to be supplied to the gas inlet conduits, respectively.

主权项

1. A vapor-phase growing apparatus, comprising:
a reactor containing a plurality of gas introduction portions and a gas reaction portion located below the gas introduction portions; a susceptor, of which a surface is exposed in an interior space of the gas reaction portion of the reactor, for disposing and fixing a substrate on the surface thereof; a gas distributor provided between the gas introduction portions and the gas reaction portion of the reactor; a plurality of gas inlet conduits which are connected with the gas introduction portions, respectively, the plurality of gas inlet conduits being disposed separately from each other; and a switching device, which is provided in an outside of the reactor, including a plurality of valves disposed upstream of each of the gas inlet conduits, each one of the plurality of valves being connected between a source of gas and a corresponding one of the gas inlet conduits to switch on or off the gas to be supplied to the corresponding gas inlet conduit, so that a number of the valves in an open state is controlled according to a volume of flow of the gas.