| 发明名称 | Method of manufacturing semiconductor device | ||
| 摘要 | A method of manufacturing a semiconductor device disclosed herein includes: mounting a substrate on an electrostatic chuck placed inside a chamber, the electrostatic chuck having a first temperature and the substrate being retained in advance in an atmosphere having a second temperature lower than the first temperature; fixing the substrate onto the electrostatic chuck by applying a voltage to the electrostatic chuck; heating the electrostatic chuck to a third temperature higher than the first temperature and the second temperature after mounting the substrate; and processing the substrate after the heating. | ||
| 申请公布号 | US8835327(B2) | 申请公布日期 | 2014.09.16 |
| 申请号 | US201313747046 | 申请日期 | 2013.01.22 |
| 申请人 | Fujitsu Limited | 发明人 | Terahara Masanori;Kokura Hikaru;Hasegawa Akihiro;Fushida Atsuo;Akaboshi Fumihiko |
| 分类号 | H01L21/302 | 主分类号 | H01L21/302 |
| 代理机构 | Westerman, Hattori, Daniels & Adrian, LLP | 代理人 | Westerman, Hattori, Daniels & Adrian, LLP |
| 主权项 | 1. A method of manufacturing a semiconductor device, the method comprising: mounting a substrate on an electrostatic chuck placed inside a chamber, the electrostatic chuck having a first temperature and the substrate being retained in advance in an atmosphere having a second temperature lower than the first temperature; fixing the substrate onto the electrostatic chuck of the first temperature by constantly applying a voltage to the electrostatic chuck after the mounting; heating the electrostatic chuck to a third temperature higher than the first temperature and the second temperature after the fixing the substrate; and processing the substrate mounting on the electrostatic chuck of the third temperature after the heating, wherein a temperature difference between the first temperature and the second temperature is equal to or below 20° C. | ||
| 地址 | Kawasaki JP | ||