Electronic component manufacturing method including step of embedding metal film

摘要

The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets.

主权项

1. An electronic component manufacturing method of gate last method having a first step of forming a high-permittivity insulating film in a trench formed on an object to be processed; and a second step of forming a metal nitride film for controlling an operation voltage on the high-permittivity insulating film, the method comprising:
a third step of depositing, at room temperature, a single barrier film including titanium nitride on the metal nitride film for controlling the operation voltage by a sputtering method while forming a cusped magnetic field on a target surface, wherein a surface roughness of the single barrier film is less than 0.479 nm; and a fourth step of filling a low-melting-point metal film directly on the single barrier film under a temperature condition allowing the low-melting-point metal film to flow.