Manufacturing method of graphene substrate and graphene substrate

摘要

The invention provides a manufacturing method of a graphene-on-insulator substrate which is mass productive, of high quality, and yet is directly usable for manufacture of semiconductor devices at a low manufacturing cost. According to the manufacturing method of a graphene substrate of the invention, a metal layer and a carbide layer are heated with the metal layer in contact with the carbide layer so that carbon in the carbide layer is dissolved into the metal layer, and then the metal layer and the carbide layer are cooled so that the carbon in the metal layer is segregated as graphene on the surface of the carbide layer.

主权项

1. A manufacturing method of a graphene substrate comprising:
(a) heating a metal layer and a carbide layer with the metal layer placed in contact with the carbide layer to dissolve carbon in the carbide layer into the metal layer; and (b) cooling the metal layer and the carbide layer to deposit the carbon in the metal layer as graphene on the surface of the carbide layer.