发明名称 |
Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system |
摘要 |
Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode electrically connected to the first conductive type semiconductor layer, an insulating support member under the light emitting structure layer, and a plurality of conductive layers between the light emitting structure layer and the insulating support member. At least one of the plurality of conductive layers has a width greater than that of the light emitting structure layer and includes a contact part disposed further outward from a sidewall of the light emitting structure layer. |
申请公布号 |
US8835972(B2) |
申请公布日期 |
2014.09.16 |
申请号 |
US201314070740 |
申请日期 |
2013.11.04 |
申请人 |
LG Innotek Co., Ltd. |
发明人 |
Jeong Hwan Hee |
分类号 |
H01L33/00;H01L33/38;H01L33/40;H01L33/44;H01L33/22 |
主分类号 |
H01L33/00 |
代理机构 |
Ked & Associates, LLP |
代理人 |
Ked & Associates, LLP |
主权项 |
1. A light emitting device comprising:
a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed a lower surface of the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode electrically connected to the first conductive type semiconductor layer; an insulating support member under the light emitting structure layer; a plurality of conductive layers between the light emitting structure layer and the insulating support member; and a second electrode disposed on a top surface of one of the plurality of conductive layers and connected to the plurality of conductive layers, wherein at least two of the plurality of conductive layers has a width greater than that of the light emitting structure layer, wherein one of the plurality of conductive layers comprises a first contact part disposed further outward from a first sidewall of the light emitting structure layer and a second contact part disposed further outward from a second sidewall of the light emitting structure layer, wherein the first sidewall of the light emitting structure layer is a different sidewall from the second sidewall, wherein the second electrode is disposed on at least one of the first and second contact part. |
地址 |
Seoul KR |