| 发明名称 | Transistor structure | ||
| 摘要 | A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector. | ||
| 申请公布号 | US8835913(B2) | 申请公布日期 | 2014.09.16 |
| 申请号 | US201213709065 | 申请日期 | 2012.12.10 |
| 申请人 | E Ink Holdings Inc. | 发明人 | Yeh Chia-Chun;Wang Henry;Tsai Yao-Chou;Huang Sung-Hui |
| 分类号 | H01L51/10;H01L27/28;H01L51/00 | 主分类号 | H01L51/10 |
| 代理机构 | CKC & Partners Co., Ltd. | 代理人 | CKC & Partners Co., Ltd. |
| 主权项 | 1. A transistor structure, comprising: a patterned first-type transparent oxide semiconductor layer formed over a substrate a base; and a patterned second-type organic polymer semiconductor layer formed on the patterned first-type transparent oxide semiconductor layer, wherein the patterned second-type organic polymer semiconductor layer composes a first portion and a second portion so that the patterned first-type transparent oxide semiconductor layer and the first portion and the second portion of the patterned second-type organic polymer semiconductor layer form heterojunctions therebetween respectively, wherein the first portion of the patterned second-type organic polymer semiconductor layer is used as an emitter, and the second portion of the patterned second-type organic polymer semiconductor layer is used as a collector. | ||
| 地址 | Hsinchu TW | ||