Fuse and integrated conductor

摘要

A fuse structure includes within an aperture within a dielectric layer located over a substrate that exposes a conductor contact layer within the substrate a seed layer interposed between the conductor contact layer and another conductor layer. The seed layer includes a doped copper material that includes a dopant immobilized predominantly within the seed layer. The fuse structure may be severed while not severing a conductor interconnect structure also located over the substrate that exposes a second conductor contact layer within a second aperture. In contrast with the fuse structure that includes the doped seed layer having the immobilized dopant, the interconnect structure includes a doped seed layer having a mobile dopant.

主权项

1. A fuse structure comprising:
a dielectric layer located over a substrate and including an aperture exposing a conductor contact layer located within the substrate; a seed layer located over the conductor contact layer and lining at least in-part the aperture while being electrically connected with the conductor contact layer, the seed layer comprising a doped copper material having an immobilized dopant located predominantly within the seed layer; a barrier layer interposed between the dielectric layer and the seed layer; an oxygen doped cobalt metal layer interposed between the barrier layer and the seed layer; and a conductor layer located over and electrically connected with the seed layer.