发明名称 |
Backside illumination image sensor and electronic system including the backside illumination image sensor |
摘要 |
A backside illumination image sensor, a method of fabricating the same, and an electronic system including the backside illumination image sensor, the backside illumination image sensor including a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface; photodiodes in the semiconductor substrate; and metal interconnections below the semiconductor substrate, wherein each of the photodiodes includes a N-type region, a lower P-type region below the N-type region, and an upper P-type region on the N-type region. |
申请公布号 |
US8836068(B2) |
申请公布日期 |
2014.09.16 |
申请号 |
US201113106369 |
申请日期 |
2011.05.12 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kwon Doo-Won |
分类号 |
H01L21/00;H01L27/146;H01L31/062 |
主分类号 |
H01L21/00 |
代理机构 |
Lee & Morse, P.C. |
代理人 |
Lee & Morse, P.C. |
主权项 |
1. A backside illumination image sensor, comprising:
a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface; photodiodes in the semiconductor substrate; isolation regions adjacent to the lower surface of the semiconductor substrate and between the photodiodes, and metal interconnections below the semiconductor substrate, wherein: each of the photodiodes includes:
an N-type region,a lower P-type region below the N-type region, andan upper P-type region on the N-type region, the upper P-type region includes at least a first P-type high-concentration region in direct physical contact with a second P-type high-concentration region, the upper P-type region has a stepwise concentration distribution of impurities between the first and second P-type high-concentration regions, the second P-type high-concentration region is directly on the N-type region, the first P-type high-concentration region and the second P-type high-concentration region are continuously disposed on the N-type region and between the photodiodes, and both the first P-type high-concentration region and the second P-type high-concentration region extend horizontally continuously to be parallel with the upper surface of the semiconductor substrate, respectively, and wherein the second P-type high-concentration region is not in contact with the isolation regions. |
地址 |
Suwon-si, Gyeonggi-do KR |