Semiconductor structure and process thereof

摘要

A semiconductor structure includes a work function metal layer, a (work function) metal oxide layer and a main electrode. The work function metal layer is located on a substrate. The (work function) metal oxide layer is located on the work function metal layer. The main electrode is located on the (work function) metal oxide layer. Moreover a semiconductor process forming said semiconductor structure is also provided.

主权项

1. A semiconductor structure, comprising:
a work function metal layer located on a substrate, the work function metal layer comprising titanium aluminide, regardless of whether the semiconductor structure is a PMOS transistor or a NMOS transistor; a work function metal oxide layer located on the work function metal layer; a main electrode located on the work function metal oxide layer; and a barrier-wetting layer located between the work function metal oxide layer and the main electrode, so that the work function metal layer, the work function metal oxide layer, the barrier-wetting layer and the main electrode constitute a metal gate.