| 发明名称 |
Lateral bipolar junction transistor |
| 摘要 |
A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; and a collector region surrounding the base region; wherein the portion of the base region under the gate does not under go a threshold voltage implant process. |
| 申请公布号 |
US8836043(B2) |
申请公布日期 |
2014.09.16 |
| 申请号 |
US201414161570 |
申请日期 |
2014.01.22 |
| 申请人 |
Mediatek Inc. |
发明人 |
Ko Ching-Chung;Lee Tung-Hsing |
| 分类号 |
H01L29/739;H01L21/8249;H01L29/735;H01L29/66;H01L27/06;H01L29/08;H01L29/06 |
主分类号 |
H01L29/739 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating a lateral bipolar junction transistor, comprising:
providing a substrate; providing a threshold voltage implant block layer to mask at least a portion of the substrate; performing a threshold voltage implant process, wherein the threshold voltage implant block layer blocks dopants of the threshold voltage implant process from doping into the at least a portion of the substrate; removing the threshold voltage implant block layer; and forming a gate over the at least a portion of the substrate. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
