Semiconductor integrated device with channel region

摘要

A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device precursor. The semiconductor device precursor includes a substrate, source/drain regions on the substrate, dummy gate stacks separating the source/drain regions on the substrate and a doped region under the dummy gate stacks. The dummy gate stack is removed to form a gate trench. The doped region in the gate trench is recessed to form a channel trench. A channel layer is deposited in the channel trench to form a channel region and then a high-k (HK) dielectric layer and a metal gate (MG) are deposited on the channel region.

主权项

1. A method for fabricating a semiconductor integrated circuit (IC), the method comprising:
receiving a semiconductor device precursor, the semiconductor device precursor including: a substrate; source/drain regions on the substrate; a dummy gate stack separating the source/drain regions on the substrate; and a doped region in the substrate and under the dummy gate stack; removing the dummy gate stack to form a gate trench; performing an ion-implantation (IMP) to the doped region in the substrate and exposed in the gate trench; recessing the doped region exposed in the gate trench to form a channel trench; forming a channel layer in the channel trench; and depositing a high-k (HK) dielectric layer and a metal gate (MG) over the channel layer, prior to depositing the channel layer, depositing a back-diffusion barrier layer on the channel trench, wherein the back-diffusion barrier layer is extended on a sidewall of the channel trench to a bottom of the channel trench.