| 发明名称 | Semiconductor structures and methods with high mobility and high energy bandgap materials | ||
| 摘要 | An embodiment is a structure comprising a substrate, a high energy bandgap material, and a high carrier mobility material. The substrate comprises a first isolation region and a second isolation region. Each of first and second isolation regions extends below a first surface of the substrate between the first and second isolation regions. The high energy bandgap material is over the first surface of the substrate and is disposed between the first and second isolation regions. The high carrier mobility material is over the high energy bandgap material. The high carrier mobility material extends higher than respective top surfaces of the first and second isolation regions to form a fin. | ||
| 申请公布号 | US8836016(B2) | 申请公布日期 | 2014.09.16 |
| 申请号 | US201213415339 | 申请日期 | 2012.03.08 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Wu Cheng-Hsien;Ko Chih-Hsin;Wann Clement Hsingjen |
| 分类号 | H01L29/772 | 主分类号 | H01L29/772 |
| 代理机构 | Slater and Matsil, L.L.P. | 代理人 | Slater and Matsil, L.L.P. |
| 主权项 | 1. A structure comprising: a substrate comprising a first isolation region and a second isolation region, each of first isolation region and the second isolation region extending below a first surface of the substrate between the first isolation region and the second isolation region; a high energy bandgap material over the first surface of the substrate, the high energy bandgap material being disposed between the first isolation region and the second isolation region, an upper surface of the high energy bandgap material comprising a plurality of facets; and a high carrier mobility material over the high energy bandgap material, the high carrier mobility material extending higher than respective top surfaces of the first isolation region and the second isolation region to form a fin. | ||
| 地址 | Hsin-Chu TW | ||