Memory device

摘要

A memory device including a substrate, a conductive layer, a charge storage layer, first and second dopant regions and first and second cell dopant regions is provided. A plurality of trenches is deployed in the substrate. The conductive layer is disposed on the substrate and fills the trenches. The charge storage layer is disposed between the substrate and the conductive layer. The first and second dopant regions having a first conductive type are configured in the substrate under bottoms of the trenches and in an upper portion of the substrate between two adjacent trenches, respectively. The first and second cell dopant regions having a second conductive type are configured in the substrate between lower portions of side surfaces of the trenches and in the substrate adjacent to the bottoms of the second dopant regions, respectively. The first and the second conductive types are different dopant types.

主权项

1. A memory device, comprising:
a substrate, having a plurality of trenches; a conductive layer, disposed on the substrate and filling the trenches; a charge storage layer, disposed between the substrate and the conductive layer; a plurality of first dopant regions, having a first conductive type and disposed in the substrate under bottom surfaces of the trenches respectively; a plurality of second dopant regions, having the first conductive type and disposed in the substrate between two adjacent trenches respectively; and a plurality of cell dopant regions, having a second conductive type and respectively disposed in the substrate between side surfaces of the trenches, wherein the first conductive type and the second conductive type are different dopant types.